inchange semiconductor isc product specification isc silicon pnp power transistor BDX16 description contunuous collector current-i c = -3a collector power dissipation- : p c = 25w @t c = 25 collector-emitter sustaining voltage- : v ceo(sus) = -140v(min) applications designed for use in general purpose switching and linear amplifier applications requiring high breakdown voltages. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -160 v v cer collector-emitter voltage r be = 100 -150 v v ceo collector-emitter voltage -140 v v ebo emitter-base voltage -7 v i c collector current-continuous -3 a i cm collector current-peak -4 a i b b base current-continuous -2 a p c collector power dissipation@t c =25 25 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 7.0 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor BDX16 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -100ma; i b = 0 -140 v v (br)cer collector-emitter breakdown voltage i c = -100ma; r be = 100 -150 v v (br)cex collector-emitter breakdown voltage i c = -100ma; v be = 1.5v -160 v v ce (sat) collector-emitter saturation voltage i c = -0.5a; i b = -50ma b -1.0 v v be( on ) base-emitter on voltage i c = -0.5a; v ce = -4v -1.7 v i cex collector cutoff current v ce = -140v;v be = 1.5v v ce = -140v;v be = 1.5v,t c =150 -1.0 -5.0 ma i ebo emitter cutoff current v eb = -7v; i c = 0 -1.0 ma h fe dc current gain i c = -0.5a; v ce = -4v 20 80 f t current gain-bandwidth product i c = -0.2a; v ce = -10v 4 mhz isc website www.iscsemi.cn 2
|
